Part Number Hot Search : 
SD520S AX150 RMPA1759 AHA3210B UC1608X M34063FD MBRS130L PUMD2
Product Description
Full Text Search
 

To Download 2SB1116 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  utc 2SB1116/a pnp epi taxial silicon transistor utc unisonic technologies co., ltd. 1 qw-r201-066,a pnp epitaxial silicon transistor description * complement to 2sd1616/a applications * audio frequency power amplifier * medium speed switching to-92 1 1: emitter 2: collector 3: base absolute maximum ratings (ta=25 c) parameter symbol ratings unit collector-base voltage 2SB1116 2SB1116a v cbo -60 -80 v collector-emitter voltage 2SB1116 2SB1116a v ceo -50 -60 v emitter-base voltage v ebo -6 v collector current (dc) ic -1 a collector current (pulse)* icp -2 a collector power dissipation pc 0.75 w junction temperature t j 150 c storage temperature t stg -55 ~ +150 c *pw Q 10ms,duty cycle Q 50% electrical characteristics (ta=25 c ) parameter symbol test conditions min typ max unit collector cut-off current i cbo v cb =-60v,i e =0 -100 na emitter cut-off current i ebo v eb =-6v,ic=0 -100 na dc current gain* h fe1 v ce =-2v,ic=-100ma 135 135 600 400 2SB1116 2SB1116a h fe2 v ce =-2v,ic=-1a 81 base-emitter on voltage* v be (on) v ce =-2v,ic=-50ma -600 -650 -700 mv collector-emitter saturation voltage* v ce (sat) ic=-1a,i b =-50ma -0.2 -0.3 v base-emitter saturation voltage* v be (sat) ic=-1a,i b =-50ma -0.9 -1.2 v output capacitance c ob v cb =-10v,i e =0,f=1mhz 25 pf current gain bandwidth product f t v ce =-2v,ic=-100ma 70 120 mhz turn on time t on 0.07 s storage time t stg 0.7 s fall time t f vcc=-10v,ic=-100ma i b1 =-i b2 =-10ma v be (off)=2 ~ 3v 0.07 s *pulse test: pw Q 350s, duty cycle Q 2%
utc 2SB1116/a pnp epi taxial silicon transistor utc unisonic technologies co., ltd. 2 qw-r201-066,a classification of h fe1 rank y g l h fe1 135 ~ 270 200 ~ 400 300 600 typical characteristics static characteristic collector current, ic (ma) -100 0 -2 -4 -6 -10 -8 -80 -60 -40 -20 collector-emitter voltage, v ce (v) i b =-250 a i b =-200 a i b =-150 a i b =-100 a i b =-50 a 0 static characteristic -1.0 0.0 -0.2 -0.4 -0.6 -1.0 -0.8 -0.8 -0.6 -0.4 -0.2 i b =-3.0ma i b =-2.5ma i b =-1.5ma i b =-0.5ma 0.0 i b =-1.0ma i b = - 2 . 0 m a i b = - 3 . 5 m a i b =-4.5ma i b =-4.0ma dc current gain dc current gain, h fe 1000 1 -0.1 -1 -10 100 10 collector current, ic (ma) -0.01 v ce =-2v base-emitter saturation voltage collector-emitter saturation voltage saturation voltage, v be (sat), v ce (sat) (v) -10 -0.01 -0.1 -1 -10 -1 -0.1 -0.01 v be (sat) v ce (sat) ic=20i b i b =-5.0ma collector-emitter voltage, v ce (v) collector current, ic (a) collector current, ic (a)
utc 2SB1116/a pnp epi taxial silicon transistor utc unisonic technologies co., ltd. 3 qw-r201-066,a switching time time, t on , t stg , t f ( s) 10 0.01 -0.01 -0.1 -1 1 0.1 collector current, ic (a) -0.001 collector output capacitance capacitance, cob (pf) 1000 1 -10 -100 100 10 collector-base voltage, v cb (v) -1 i e =0 f=1mhz t stg t f t on vcc=-10v ic=10i b1 =-10i b2 current gain bandwidth product current gain-bandwidth product, f t (mhz) 1000 1 -0.1 -1 -10 100 10 collector current, ic (ma) -0.01 v ce =-2v safe operating area collector current, ic (a) -10 -0.01 -10 -100 -1 -0.1 collector-emitter voltage, v ce (v) -1 200ms d c p w = 1 m s 1 0 m s 2s b 1 1 16 a power derating power dissipation, pc (w) 0.8 0.3 25 50 75 150 100 0.7 0.6 0.5 0.4 ambient temperature, ta ( ) 0 0.2 0.1 0.0 125 175 2s b 1 11 6
utc 2SB1116/a pnp epi taxial silicon transistor utc unisonic technologies co., ltd. 4 qw-r201-066,a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.


▲Up To Search▲   

 
Price & Availability of 2SB1116

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X